Roadmap on atomic-scale semiconductor devices

Abstract Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing technologies. The proposal to use nuclear and electronic spins of donor atoms in silicon, introduced by Kane in 1998, sparked a new research field focused on the precise positioning of individual impurity atoms for quantum devices, utilising scanning tunnelling microscopy and ion implantation. This roadmap article reviews the advancements in the 25 years since Kane’s proposal, the current challenges, and the future directions in atomic-scale semiconductor device fabrication and measurement. It covers the quest to create a silicon-based quantum computer and expands to include diverse material systems and fabrication techniques, highlighting the potential for a broad range of semiconductor quantum technological applications. Key developments include phosphorus in silicon devices such as single-atom transistors, arrayed few-donor devices, one- and two-qubit gates, three-dimensional architectures, and the development of a toolbox for future quantum integrated circuits. The roadmap also explores new impurity species like arsenic and antimony for enhanced scalability and higher-dimensional spin systems, new chemistry for dopant precursors and lithographic resists, and the potential for germanium-based devices. Emerging methods, such as photon-based lithography and electron beam manipulation, are discussed for their disruptive potential. This roadmap charts the path toward scalable quantum computing and advanced semiconductor quantum technologies, emphasising the critical intersections of experiment, technological development, and theory.

Authors

Institutions

Publication Details

Journal
Nano Futures
Published
2025-01-10
DOI
https://doi.org/10.1088/2399-1984/ada901
Citations
14
Primary Topic
Electronic and Structural Properties of Oxides
Type
article
Field-Weighted Citation Impact
7.25

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Roadmap on atomic-scale semiconductor devices

David Cox, B. N. Murdin, Christopher Allemang, Emma Fowler et al.
14 citations
Nano Futures
Electronic and Structural Properties of Oxides
7.25
article

Roadmap on atomic-scale semiconductor devices

David Cox, B. N. Murdin, Christopher Allemang, Emma Fowler, Evan M. Anderson, David N. Jamieson, Procopios Constantinou, S. K. Clowes, Holly G. Stemp, Steven R. Schofield, Paul Räcke, Sven M. J. Rogge, Quinn Campbell, Alexander Jakob, Mateus G. Masteghin, Scott Schmucker, B. Voisin, Yasin Ekinci, Neil J. Curson, Tzu-Ming Lu, Ferdinand Schmidt‐Kaler, Dimitrios Kazazis, Taylor J. Z. Stock, Robert A. Wolkow, Robert Butera, Jonathan Wyrick, Andrea Morello, Sergei V. Kalinin, Pradeep Namboodiri, D. Spemann, M. Y. Simmons, Joseph W. Lyding, Joris Gerhard Keizer, A. J. Fisher, Gerd Duscher, James H. G. Owen, S. O. Reza Moheimani, Eran Ginossar, Richard M. Silver, Utkarsh Pratiush, Lucian Livadaru, Jason Pitters, John J. Randall, Fan Fei, Т. В. Павлова, Jeffrey Ivie, Ezra Bussmann, Xujiao Gao, Shashank Misra, G. Aeppli
article en
14 citations

Abstract

Abstract Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing technologies. The proposal to use nuclear and electronic spins of donor atoms in silicon, introduced by Kane in 1998, sparked a new research field focused on the precise positioning of individual impurity atoms for quantum devices, utilising scanning tunnelling microscopy and ion implantation. This roadmap article reviews the advancements in the 25 years since Kane’s proposal, the current challenges, and the future directions in atomic-scale semiconductor device fabrication and measurement. It covers the quest to create a silicon-based quantum computer and expands to include diverse material systems and fabrication techniques, highlighting the potential for a broad range of semiconductor quantum technological applications. Key developments include phosphorus in silicon devices such as single-atom transistors, arrayed few-donor devices, one- and two-qubit gates, three-dimensional architectures, and the development of a toolbox for future quantum integrated circuits. The roadmap also explores new impurity species like arsenic and antimony for enhanced scalability and higher-dimensional spin systems, new chemistry for dopant precursors and lithographic resists, and the potential for germanium-based devices. Emerging methods, such as photon-based lithography and electron beam manipulation, are discussed for their disruptive potential. This roadmap charts the path toward scalable quantum computing and advanced semiconductor quantum technologies, emphasising the critical intersections of experiment, technological development, and theory.

Nano FuturesVol. 9(1)
National Institute of Standards and Technology (US), University of Alberta (CA), University of Illinois Urbana-Champaign (US), The University of Texas at Dallas (US), The University of Melbourne (AU), Johannes Gutenberg University Mainz (DE), Board of the Swiss Federal Institutes of Technology (CH), London Centre for Nanotechnology (GB), Paul Scherrer Institute (CH), University of Surrey (GB), UNSW Sydney (AU), ETH Zurich (CH), National Institute for Nanotechnology (CA), Centre for Quantum Computation and Communication Technology (AU), Sandia National Laboratories (US), Physical Sciences (United States) (US), Zyvex (United States) (US), Prokhorov General Physics Institute (RU), Leibniz Institute of Surface Engineering (DE), University College London (GB), École Polytechnique Fédérale de Lausanne (CH), University of Maryland, College Park (US), University of Tennessee at Knoxville (US), University of North Texas at Dallas (US), Leipzig University (DE), Silicon Labs (United States) (US)
National Science Foundation, U.S. Department of Energy, Microsoft, Compute Canada, Deutscher Akademischer Austauschdienst, Paul Scherrer Institut, Russian Science Foundation, Alberta Innovates, Defense Advanced Research Projects Agency, Natural Sciences and Engineering Research Council of Canada, Engineering and Physical Sciences Research Council, Office of Naval Research, Centre of Excellence for Quantum Computation and Communication Technology, Australian Research Council, Army Research Office, Sandia National Laboratories
Industry, innovation and infrastructure
Openalex Percentile: Top 2%
Electronic and Structural Properties of Oxides
7.25
DOIOpen Access PDFOpenAlex
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.