Electronic Raman Scattering Thermometry of Disordered Solids

Dynamic disorder in metal halide perovskites is driven by thermal structural fluctuations of cross-linked octahedra leading to a broadband central peak in the low-frequency region of electronic Raman scattering spectrum. In this work, a temperature dependence of the Raman central peak in metal halide perovskite CsPbBr3 is experimentally demonstrated. The results of this study hold promise for the development of edge-cutting remote temperature sensors.

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Publication Details

Journal
Journal of Experimental and Theoretical Physics Letters
Published
2024-11-01
DOI
https://doi.org/10.1134/s0021364024603737
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
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article

Electronic Raman Scattering Thermometry of Disordered Solids

S. S. Kharintsev, Elina I. Battalova
Journal of Experimental and Theoretical Physics Letters
Advanced Thermoelectric Materials and Devices
article

Electronic Raman Scattering Thermometry of Disordered Solids

S. S. Kharintsev, Elina I. Battalova
article en

Abstract

Dynamic disorder in metal halide perovskites is driven by thermal structural fluctuations of cross-linked octahedra leading to a broadband central peak in the low-frequency region of electronic Raman scattering spectrum. In this work, a temperature dependence of the Raman central peak in metal halide perovskite CsPbBr3 is experimentally demonstrated. The results of this study hold promise for the development of edge-cutting remote temperature sensors.

Journal of Experimental and Theoretical Physics LettersVol. 120(10)
Kazan Federal University (RU)
Openalex Percentile: Top 84%
Advanced Thermoelectric Materials and Devices
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