Bandgap in intrinsic graphene for semiconductor applications

In the past, silicon was a very practical and widely used semiconductor material. In recent years, with the gradual development of electronic devices, people have been continuously searching for more efficient semiconductor materials to replace silicon and fulfill higher requirements. Graphene exhibits outstanding electron mobility and thermal conductivity, positioning it as a promising new semiconductor material. Nonetheless, the absence of intrinsic bandgaps constitutes a significant drawback, impeding its direct application as semiconductors. Therefore, this article reviews articles related to opening the graphene bandgap and discusses several methods for opening the graphene bandgap. The review identifies three possible methods: doping, quantum confinement, and substrate-induced bandgap opening. While each method has its unique characteristics, they also come with certain drawbacks, such as potentially reducing graphene's high efficiency or presenting challenges in control and implementation. The review suggests that growing graphene nanoribbons (GNRs) in hexagonal boron nitride (hBN) stacks may offer a potential solution to these challenges.