Applications of molybdenum disulfide in low-power semiconductor devices

Molybdenum disulfide (MoS2) is a class of two-dimensional metal dichalcogenides inorganic materials that has layered structure similar to graphene. Although widely known as a lubricant, it shows even more potential as a 2D semiconductor in the electronic industry. Due to its excellent properties like layered structure and moderate bandgap (1.8 eV), molybdenum disulfide has attracted great research interests. As more researchers investigate its properties and applications, MoS2has proven capable of overcoming drawbacks of certain materials. For instance, it addresses the zero bandgap issue of graphene and mitigates short channel effects in silicon transistors. Additionally, it enhances the performance of low-power (LP) electronic devices. In this review, researches on MoS2’s properties, applications, and approaches to overcome its limitations are introduced to provide an overview of MoS2as a 2D semiconductor in LP devices, including transistors, microprocessors, integrated circuits, photodetectors, gas sensors, and biosensors. Furthermore, the unique properties of MoS2, coupled with advancements in nanofabrication techniques, pave the way for its integration into next-generation optoelectronic devices.

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Publication Details

Journal
IET conference proceedings.
Published
2025-01-01
DOI
https://doi.org/10.1049/icp.2024.4060
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Applications of molybdenum disulfide in low-power semiconductor devices

Jinxuan Nang
IET conference proceedings.
Chalcogenide Semiconductor Thin Films
article

Applications of molybdenum disulfide in low-power semiconductor devices

Jinxuan Nang
article en

Abstract

Molybdenum disulfide (MoS2) is a class of two-dimensional metal dichalcogenides inorganic materials that has layered structure similar to graphene. Although widely known as a lubricant, it shows even more potential as a 2D semiconductor in the electronic industry. Due to its excellent properties like layered structure and moderate bandgap (1.8 eV), molybdenum disulfide has attracted great research interests. As more researchers investigate its properties and applications, MoS2has proven capable of overcoming drawbacks of certain materials. For instance, it addresses the zero bandgap issue of graphene and mitigates short channel effects in silicon transistors. Additionally, it enhances the performance of low-power (LP) electronic devices. In this review, researches on MoS2’s properties, applications, and approaches to overcome its limitations are introduced to provide an overview of MoS2as a 2D semiconductor in LP devices, including transistors, microprocessors, integrated circuits, photodetectors, gas sensors, and biosensors. Furthermore, the unique properties of MoS2, coupled with advancements in nanofabrication techniques, pave the way for its integration into next-generation optoelectronic devices.

IET conference proceedings.Vol. 2024(19)
Masteel (China) (CN)
Affordable and clean energy
Openalex Percentile: Top 100%
Chalcogenide Semiconductor Thin Films
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Applications of molybdenum disulfide in low-power semiconductor devices — Jinxuan Nang · IET conference proceedings. (2025) | TGRS Research Map | TGRS