Applications of molybdenum disulfide in low-power semiconductor devices
Molybdenum disulfide (MoS2) is a class of two-dimensional metal dichalcogenides inorganic materials that has layered structure similar to graphene. Although widely known as a lubricant, it shows even more potential as a 2D semiconductor in the electronic industry. Due to its excellent properties like layered structure and moderate bandgap (1.8 eV), molybdenum disulfide has attracted great research interests. As more researchers investigate its properties and applications, MoS2has proven capable of overcoming drawbacks of certain materials. For instance, it addresses the zero bandgap issue of graphene and mitigates short channel effects in silicon transistors. Additionally, it enhances the performance of low-power (LP) electronic devices. In this review, researches on MoS2’s properties, applications, and approaches to overcome its limitations are introduced to provide an overview of MoS2as a 2D semiconductor in LP devices, including transistors, microprocessors, integrated circuits, photodetectors, gas sensors, and biosensors. Furthermore, the unique properties of MoS2, coupled with advancements in nanofabrication techniques, pave the way for its integration into next-generation optoelectronic devices.
Authors
- Jinxuan Nang
Institutions
- Masteel (China) (CN)
Publication Details
- Journal
- IET conference proceedings.
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1049/icp.2024.4060
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00