High performance triboelectric nanogenerator by synchrotron x-ray assisted Ru/g-C3N4 nanostructure incorporated into PDMS matrix

The integration of metal–semiconductor nanostructures is of significant interest to the advanced technology development. However, the synthesis methods for metal–semiconductor nanostructures are complicated and require multi-stage processing, which includes the separate synthesis of metallic and semiconductor nanostructures, controlling pH, and dedicated equipments. Herein, we report a one-step in situ synthesis and simultaneous embedding of Ru nanostructures on g-C3N4 nanosheets using the synchrotron x-ray irradiation method. The results indicate that Ru nanostructures were uniformly embedded within the g-C3N4 nanosheets, leading to the formation of Ru—O, RuO2, and Ru—O—Ru chemical bonds. Moreover, three distinct types of Ru nanostructures could be achieved by adjusting the x-ray dose. High-performance triboelectric nanogenerators (TENGs) were fabricated using these three types of Ru-embedded g-C3N4 nanosheets within a PDMS matrix. The output performance of these TENG devices was compared with that of PDMS and g-C3N4/PDMS TENGs. The improved dielectric constant contributes to the high performance of the TENG. The synthesized Ru/g-C3N4 nanostructures are notably significant due to increased contact surface area, charge distribution density, and the formation of a metal–semiconductor heterostructure system. These characteristics lead to high charge transfer rates, improved charge transport, and a higher density of charge trapping centers within the insulating matrix. Thus, we achieved a high TENG peak power density of 4.86 W/m2 during the contact separation process. The practical applicability of the TENG is also demonstrated. Furthermore, a 47 μF capacitor could be charged to 7.8 V in ∼400 s and can be used to continuously drive low power electronic gadgets.