Parameter optimization method for multi-devices parallel of SiC MOSFET

SiC MOSFET is favored by designers in aerospace power supply because of its high speed and high efficiency. For the design of high-power power supply for aerospace, multi-devices parallel design is usually used. However, the current production process cannot guarantee that the reverse recovery characteristics of each SiC MOSFET produced are completely consistent, which will cause the gate oscillation problem of SiC MOSFET after parallel connection.