Non‐Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold (Adv. Sci. 1/2025)
2D Tellurium Goes memrisTive2D tellurium showcases remarkable characteristics, including simplicity in its chemistry, structure, and synthesis, making it ideal for a wide range of applications.In article number 2406703, Christian Martella, Deji Akinwande, Alessandro Molle, and co-workers present the first memristor design utilizing nanoscaled tellurium, synthesized via vapor transport deposition at a temperature as low as 100 C directly on gold substrates.This method ensures full compatibility with back-end-of-line processing.
Authors
- Davide Codegoni
- Sara Ghomi (ORCID: https://orcid.org/0009-0006-9548-5478)
- Sepideh Gharedaghi
- Paolo Targa
- Carlo Grazianetti (ORCID: https://orcid.org/0000-0003-0060-9804)
- Chiara Massetti (ORCID: https://orcid.org/0000-0002-4011-1181)
- Alessio Lamperti (ORCID: https://orcid.org/0000-0003-2061-2963)
- Deji Akinwande (ORCID: https://orcid.org/0000-0001-7133-5586)
- Alessandro Molle (ORCID: https://orcid.org/0000-0002-3860-4120)
- Christian Martella (ORCID: https://orcid.org/0000-0003-1811-165X)
- Yoon‐Seok Lee (ORCID: https://orcid.org/0000-0002-4401-9489)
- Andrea Serafini (ORCID: https://orcid.org/0000-0003-2686-4731)
- Penny Hui‐Ping Chang
Publication Details
- Journal
- Advanced Science
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1002/advs.202570006
- Citations
- 1
- Primary Topic
- Advanced Semiconductor Detectors and Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.73