A Low Supply Voltage Current and Voltage Reference Using Self–Cascode Composite Transistor

In this work, a new circuit topology for a voltage and current reference that operates with a minimum supply voltage of 0.8 V and uses self-cascode composite transistors is discussed and silicon results are presented. Considering four fabricated samples, the mean values obtained for the output voltage and the output current are 484 mV and 1.32 μA, respectively. The average measured temperature coefficients are 25 ppm/°C and 77 ppm/°C for the voltage and current references, in a temperature range of - 30 °C and 100 °C. The circuit presents a good line regulation performance of 0.082 mV/V and 8 nA/V. The layout area of the fabricated circuit using a conventional 0.18 µm n-well CMOS process is 0.175 mm2 (269 µm x 654 µm), while the power supply current is less than 8 µA.

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Publication Details

Journal
Journal of Integrated Circuits and Systems
Published
2024-12-23
DOI
https://doi.org/10.29292/jics.v19i3.860
Citations
2
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
0.42

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article

A Low Supply Voltage Current and Voltage Reference Using Self–Cascode Composite Transistor

Dalton Martini Colombo, Thainann Henrique Pereira de Castro, Robson Luiz Moreno
2 citations
Journal of Integrated Circuits and Systems
Advanced Memory and Neural Computing
0.42
article

A Low Supply Voltage Current and Voltage Reference Using Self–Cascode Composite Transistor

Dalton Martini Colombo, Thainann Henrique Pereira de Castro, Robson Luiz Moreno
article en
2 citations

Abstract

In this work, a new circuit topology for a voltage and current reference that operates with a minimum supply voltage of 0.8 V and uses self-cascode composite transistors is discussed and silicon results are presented. Considering four fabricated samples, the mean values obtained for the output voltage and the output current are 484 mV and 1.32 μA, respectively. The average measured temperature coefficients are 25 ppm/°C and 77 ppm/°C for the voltage and current references, in a temperature range of - 30 °C and 100 °C. The circuit presents a good line regulation performance of 0.082 mV/V and 8 nA/V. The layout area of the fabricated circuit using a conventional 0.18 µm n-well CMOS process is 0.175 mm2 (269 µm x 654 µm), while the power supply current is less than 8 µA.

Journal of Integrated Circuits and SystemsVol. 19(3)
Universidade Federal de Minas Gerais (BR), Universidade Federal de Itajubá (BR)
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, Conselho Nacional de Desenvolvimento Científico e Tecnológico, Fundação de Amparo à Pesquisa do Estado de Minas Gerais, Instituto Serrapilheira
Openalex Percentile: Top 35%
Advanced Memory and Neural Computing
0.42
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