Top-down micro and nano structuring of wide bandgap semiconductors for ultraviolet photodetection

This review focuses on top-down dry and wet etching of III-nitrides, SiC, Ga 2 O 3 , and diamond to create micro/nanostructured UV photodetectors, enabling enhanced light trapping and improved device performance.

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Publication Details

Journal
Journal of Materials Chemistry C
Published
2025-01-01
DOI
https://doi.org/10.1039/d4tc03230f
Citations
9
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
3.85
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article

Top-down micro and nano structuring of wide bandgap semiconductors for ultraviolet photodetection

Yikai Liao, Ramit Kumar Mondal, Munho Kim, Jiangnan Dai et al.
9 citations
Journal of Materials Chemistry C
Ga2O3 and related materials
3.85
article

Top-down micro and nano structuring of wide bandgap semiconductors for ultraviolet photodetection

Yikai Liao, Ramit Kumar Mondal, Munho Kim, Jiangnan Dai, Zhihua Zheng, You Jin Kim
article en
9 citations

Abstract

This review focuses on top-down dry and wet etching of III-nitrides, SiC, Ga 2 O 3 , and diamond to create micro/nanostructured UV photodetectors, enabling enhanced light trapping and improved device performance.

Journal of Materials Chemistry CVol. 13(7)
Nanyang Technological University (SG), Wuhan National Laboratory for Optoelectronics (CN), Huazhong University of Science and Technology (CN)
Affordable and clean energy
Openalex Percentile: Top 6%
Ga2O3 and related materials
3.85
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