Improved threshold voltage stability for GaN p-channel field effect transistors by hydrogen plasma treatment
Abstract This work proposes a novel gate stack with hydrogen (H) plasma treatment to improve the stability of p-channel field effect transistors (p-FETs). The threshold voltage ( V TH ) of this device is −4.82 V, achieving normally-off operation, with exhibiting an I on / I off ratio of 10 6 and a low off-state leakage current of −10 −7 mA mm −1 at V GS = 2 V. The H plasma-treated gate stack significantly stabilizes the V TH of GaN p-FETs, exhibiting minimal variations of 0.14 V and 0.15 V under negative (−5 V) and positive (5 V) gate voltages, respectively. H plasma treatment technology optimizes the sub-gate interface and enhances the threshold voltage stability of the device, guaranteeing the stable application of p-FETs in logic circuits.
Authors
- Chunfeng Hao
- Jiaan Zhou (ORCID: https://orcid.org/0000-0002-4136-8376)
- Y. Zhang (ORCID: https://orcid.org/0009-0001-1055-9444)
- An‐Ping Li (ORCID: https://orcid.org/0000-0003-4400-7493)
- Runxian Xing (ORCID: https://orcid.org/0000-0001-6980-2392)
- Jinxia Jiang
- Zhongming Zeng (ORCID: https://orcid.org/0000-0001-7240-2058)
- S.L. Lu (ORCID: https://orcid.org/0009-0000-4332-9509)
- Yang An (ORCID: https://orcid.org/0000-0003-1527-033X)
- Li Yu (ORCID: https://orcid.org/0000-0003-4134-585X)
- Guohao Yu (ORCID: https://orcid.org/0000-0002-6921-2728)
- Baoshun Zhang (ORCID: https://orcid.org/0000-0002-4628-8236)
- Bohan Guo (ORCID: https://orcid.org/0009-0000-6952-8637)
- Yong Cai
- Huixin Yue
Institutions
- University of Science and Technology of China (CN)
- Chinese Academy of Sciences (CN)
- Suzhou University of Science and Technology (CN)
- Suzhou Institute of Nano-tech and Nano-bionics (CN)
Publication Details
- Journal
- Journal of Physics D Applied Physics
- Published
- 2025-01-09
- DOI
- https://doi.org/10.1088/1361-6463/ada809
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.26
Funders
- National Natural Science Foundation of China
- Youth Innovation Promotion Association of the Chinese Academy of Sciences