Enhancing RF Applications: Integration of 55nm BiCMOS Technology in a Common Emitter Amplifier Using COMSOL Multiphysics

This study explores the simulation of an SiGe Heterojunction Bipolar Transistor (HBT), integrated in BiCMOS55 nm using COMSOL Multiphysics, designed for highfrequency RF applications. The HBT enhances high attractive performances ($f_{\text {max }}\gt400 \mathrm{GHz}$), The integration into a common emitter amplifier circuit and detailed simulations reveal superior voltage gains, impedance and cut-off frequencies, confirming the transformative potential of BiCMOS55nm technology for advanced RF components.