Subthreshold Performance Assessment of Nanoscale Negative Capacitance Junctionless GAA MOSFETs

The present study aims at investigating the impact of the ferroelectric materials and channel lengths on the subthreshold swing factor of nanoscale Negative Capacitance Junctionless Gate All Around NCJGAA- MOSFETs. In this regard, analytical modeling of surface potential and subthreshold swing, including short channel and ferroelectric material effects, is performed. The surface potential subthreshold swing models are analytically developed by solving the Poisson’s equation in cylindrical coordinates in the channel region, including the negative capacitance and ferroelectric material effects on the device performance. The subthreshold swing (SS) variation is presented as function of different ferroelectric materials and variable channel length (L), in order to study the scaling capability of the proposed device. The obtained analytical results are in good agreement with numerical simulations. A minimum SS of $52 \mathrm{mV} /$ decade is recorded for $\mathrm{L}=30 \mathrm{~nm}$ using the doped-hafnium oxide as ferroelectric material, making it ideal for usage in low-power and digital nanoelectronic applications.