Impact of the Band Structure Parameters on the Optical Gain in In_xAl_1-xAs/GaAs Quantum Well Structures

The optical gain for the TE mode in the InAlAs/GaAs quantum well structure was investigated based on the Schrödinger equation and the parabolic effective mass approximation. The impact of Indium addition on the energy of the interband transitions was also analyzed. Effects of strain are included. The injected carrier density (N), well thickness ($\mathrm{L}_{\mathrm{w}}$), and intraband relaxation ($\tau_{\text {intr }}$), are also explored. The present calculation results show that the peak gain and corresponding emission wavelength will be affected by changing these factors.