Investigating the (CdS/ZnS) Buffer Layers’effect on CIGS Solar Cells Performance By SCAPS-1D Simulator

In this paper, a CIGS solar cell is simulated in SCAPS-1D software. The cell configuration included a copper indium gallium selenide (CIGS) absorber layer, cadmium sulfide (CdS) and zinc sulfide (ZnS) buffer layers, and a conductive n -type layer resembling zinc oxide (ZnO). Our objective was to compare and explore the effectiveness of these buffer materials in enhancing the CIGS solar cells performance, with a focus on achieving high efficiency. We systematically examined various parameters, such as acceptor density and absorber layer thickness, to understand their influence on cell performance. Following thorough analysis, we identified the optimized structure, $\mathrm{ZnO} / \mathrm{ZnS} / \mathrm{CIGS} / \mathrm{Mo}$, which exhibited an efficiency of $\mathbf{2 2, 1 1 \%}$, fill factor (FF) of $\mathbf{8 2, 9 2} \%$, open circuit voltage (Voc) of $0,7308 \mathrm{~V}$, and short circuit current density (Jsc) of $36,49 \mathrm{~mA} / \mathrm{cm}^{2}$.