Modeling of Schottky Diode for Rectenna Device

Parameter extraction is a critical step in circuit modelling approaches that rely on physical models of semiconductor devices. This research proposes a unique technique for extracting physical parameters from Schottky diodes. This method uses a series of analytical methods to extract the diode chip’s relevant physical properties uniquely. The package’s parasitic parameters are then extracted using a deembedding process. The suggested technique is validated using a model HSMS-282c commercial Schottky diode as an example. Its physical attributes are retrieved and utilized to model the diode’s electrical properties.