Inhibition of Pt-InGaAs chemical reaction by Al incorporation: towards stable Pt Schottky barriers on GaAs-based alloys and compounds
Abstract Platinum and Gallium Arsenide reaction is a common issue for the stability of Pt-GaAs contacts, where the formation of different alloys during the fabrication and operation degrades the performance of the devices. In this work, we have carried out in situ deposition of Pt on GaAs and InAlGaAs in the focused ion beam machine and carried out annealing in the high-resolution transmission electron microscope. The local strains were then determined using the geometrical phase analysis technique and the various phases were obtained by digital extraction of lattice fringes. They are mainly Pt 3 InGa and Pt 3 InGaAl metallic nanoparticles and it is shown that the occupancy of In/Ga sites by Al atoms shrinks the Pt 3 InGa local lattice. This strong compression of the (001) and (110) atomic plane narrows the dimer row and thus hinders the diffusion of large atoms such as In/Ga. Therefore, the Schottky barrier is stabilized as further chemical reaction of Pt-InGaAs is blocked. The highest degree of electron localization between Pt and Al atoms is further confirmed by electron localization function calculations.
Authors
- Manyu Dang
- Huiwen Deng (ORCID: https://orcid.org/0000-0003-2680-152X)
- P. Ruterana (ORCID: https://orcid.org/0000-0001-7356-8850)
- Mingchu Tang (ORCID: https://orcid.org/0000-0001-6626-3389)
- Junjiang Zhu (ORCID: https://orcid.org/0000-0003-1107-1659)
- Longqing Chen (ORCID: https://orcid.org/0000-0003-2050-5383)
- Huiyun Liu (ORCID: https://orcid.org/0000-0002-7654-8553)
- Zuhuang Chen (ORCID: https://orcid.org/0000-0003-1912-6490)
- Jiawei Dong (ORCID: https://orcid.org/0000-0002-3853-1910)
- Yang Qiu (ORCID: https://orcid.org/0000-0002-9110-1282)
- Xiaoyi Wang (ORCID: https://orcid.org/0000-0002-6029-7665)
- Xin Zhang (ORCID: https://orcid.org/0000-0003-2000-858X)
- Jinfeng Li (ORCID: https://orcid.org/0009-0006-9591-2388)
- Jian Ma (ORCID: https://orcid.org/0000-0003-4448-592X)
- Yong Deng
- Jiawei Zheng (ORCID: https://orcid.org/0000-0002-4742-7234)
- Wenyu Hu
- Jianchao Xiong
- Tao Gong
- Zhenyu Ma
Institutions
- Centre National de la Recherche Scientifique (FR)
- University of Electronic Science and Technology of China (CN)
- École Nationale Supérieure d'Ingénieurs de Caen (FR)
- Sichuan University (CN)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- State Ethnic Affairs Commission (CN)
- China Academy of Engineering Physics (CN)
- Southern University of Science and Technology (CN)
- Chengdu University of Technology (CN)
- Korea Testing Certification (KR)
- Centre de Recherche sur les Ions, les Matériaux et la Photonique (FR)
- The London College (GB)
- University College London (GB)
Publication Details
- Journal
- Journal of Physics D Applied Physics
- Published
- 2025-01-09
- DOI
- https://doi.org/10.1088/1361-6463/ada805
- Primary Topic
- Electron and X-Ray Spectroscopy Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- China Academy of Engineering Physics
- Engineering and Physical Sciences Research Council