AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz

Abstract Aluminum Scandium Nitride (AlScN) is an attractive material for use as a lattice-matched epitaxial barrier layer in GaN high-electron mobility transistors (HEMTs). Here we report the device fabrication, direct current (DC) and radio frequency (RF) characteristics of epitaxial AlScN/AlN/GaN HEMTs on SiC substrates with regrown ohmic contacts. These devices show record high on-current of over 4 A/mm, high cutoff frequency ( f T ) of 92.4 GHz and maximum oscillation frequency ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>f</mml:mi> </mml:mrow> <mml:mrow> <mml:mi mathvariant="normal">MAX</mml:mi> </mml:mrow> </mml:msub> </mml:math> ) of 134.3 GHz.

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Publication Details

Journal
Applied Physics Express
Published
2025-01-01
DOI
https://doi.org/10.35848/1882-0786/ada86b
Citations
17
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
21.39

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article

AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz

Daniel Hannan, Shamima Afroz, Austin Hickman, Kazuki Nomoto et al.
17 citations
Applied Physics Express
GaN-based semiconductor devices and materials
21.39
article

AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz

Daniel Hannan, Shamima Afroz, Austin Hickman, Kazuki Nomoto, Thai‐Son Nguyen, Takuya Maeda, Chandrashekhar Savant, Jimy Encomendero, Huili Grace Xing, Ved Gund, Hyunjea Lee, Joseph Casamento, T. Vasen, Lei Li, James C. M. Hwang, Debdeep Jena
article en
17 citations

Abstract

Abstract Aluminum Scandium Nitride (AlScN) is an attractive material for use as a lattice-matched epitaxial barrier layer in GaN high-electron mobility transistors (HEMTs). Here we report the device fabrication, direct current (DC) and radio frequency (RF) characteristics of epitaxial AlScN/AlN/GaN HEMTs on SiC substrates with regrown ohmic contacts. These devices show record high on-current of over 4 A/mm, high cutoff frequency ( f T ) of 92.4 GHz and maximum oscillation frequency ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>f</mml:mi> </mml:mrow> <mml:mrow> <mml:mi mathvariant="normal">MAX</mml:mi> </mml:mrow> </mml:msub> </mml:math> ) of 134.3 GHz.

Applied Physics ExpressVol. 18(1)
Cornell University (US), Northrop Grumman (United States) (US)
National Science Foundation
Affordable and clean energy
Openalex Percentile: Top 1%
GaN-based semiconductor devices and materials
21.39
DOIOpen Access PDFOpenAlex
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AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency &gt;130 GHz — Daniel Hannan, Shamima Afroz, et al. · Applied Physics Express (2025) | TGRS Research Map | TGRS