Towards all inorganic antimony sulphide semitransparent solar cells
NiO, a wide band gap hole-transporting material (HTM), is gaining attention in photovoltaics due to its optical transparency, chemical stability, and favourable band alignment with absorber. This study uses NiO<sub>x</sub> nanoparticle-based HTM in semi-transparent Sb<sub>2</sub>S<sub>3</sub> solar cells via a simple chemical precipitation method. We optimised NiO<sub>x</sub> layer by varying precursor solution concentration and studied its impact on optical and structural properties, composition of nanoparticles and subsequent effect on the performance of semi-transparent Sb<sub>2</sub>S<sub>3</sub> solar cell. NiO<sub>x</sub> nanoparticles, deposited from nickel(II)nitrate hexahydrate (precursor solution concentrations of 0.2 M to 1.2 M), were thermally treated by two steps at 90 °C for 6 h and 270 °C for 3 h. Nanoparticles with crystallite sizes of 6-9 nm had band gaps (Eg) of ca. 3.65-3.70 eV. Using 1.2 M concentration yielded the largest crystallites (9 nm), lowest Eg (3.65 eV) while retaining the most precursor residues. The highest power conversion efficiency (2.68%) was achieved with NiO<sub>x</sub> from a 0.5 M precursor, a 60% improvement over HTM-free cells. The effect of precursor solution concentration on the solar cell parameters (efficiency, fill factor, open circuit voltage and short circuit current) are discussed. Present work paves a path toward stable, efficient, and cost-effective all-inorganic Sb<sub>2</sub>S<sub>3</sub> solar cells using NiO<sub>x</sub> HTM instead of organic counterparts.
Authors
- Nicolae Spalatu (ORCID: https://orcid.org/0000-0003-0234-2170)
- Merike Kriisa (ORCID: https://orcid.org/0000-0002-4454-5024)
- Ilona Oja Açik (ORCID: https://orcid.org/0000-0002-1870-3543)
- Malle Krunks (ORCID: https://orcid.org/0000-0003-4658-4403)
- Alka Pareek (ORCID: https://orcid.org/0000-0003-4030-9099)
- Atanas Katerski (ORCID: https://orcid.org/0000-0003-1980-3391)
Institutions
- Tallinn University of Technology (EE)
Publication Details
- Journal
- Scientific Reports
- Published
- 2025-01-09
- DOI
- https://doi.org/10.1038/s41598-025-85676-x
- Citations
- 5
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 3.65
Funders
- European Commission
- Eesti Teadusagentuur
- Haridus- ja Teadusministeerium