Modified information criterion for change-point gamma process model

In practical scenarios, the degradation process of components like often exhibits multi-stage characteristics due to internal degradation mechanisms and external environmental factors. For precise analysis of the reliability characteristics of these components, identifying the change-point location is essential. It enables researchers and engineers to select or develop a change-point model that accurately depicts these behaviors. Traditional methods to detect change points are time-consuming; therefore, employing a modified information criterion method to detect the existence and estimate the change-point location presents a viable alternative. The efficacy of this method is evaluated through several numerical simulations. Subsequently, this approach is applied to metal oxide semiconductor field-effect transistor data to demonstrate its practical application.

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Publication Details

Journal
IET conference proceedings.
Published
2025-01-01
DOI
https://doi.org/10.1049/icp.2024.3706
Primary Topic
Reliability and Maintenance Optimization
Type
article
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article

Modified information criterion for change-point gamma process model

Sijia Guo, Xia Cai, Jiahua Qiao
IET conference proceedings.
Reliability and Maintenance Optimization
article

Modified information criterion for change-point gamma process model

Sijia Guo, Xia Cai, Jiahua Qiao
article en

Abstract

In practical scenarios, the degradation process of components like often exhibits multi-stage characteristics due to internal degradation mechanisms and external environmental factors. For precise analysis of the reliability characteristics of these components, identifying the change-point location is essential. It enables researchers and engineers to select or develop a change-point model that accurately depicts these behaviors. Traditional methods to detect change points are time-consuming; therefore, employing a modified information criterion method to detect the existence and estimate the change-point location presents a viable alternative. The efficacy of this method is evaluated through several numerical simulations. Subsequently, this approach is applied to metal oxide semiconductor field-effect transistor data to demonstrate its practical application.

IET conference proceedings.Vol. 2024(12)
Hebei University of Science and Technology (CN)
Climate action
Openalex Percentile: Top 100%
Reliability and Maintenance Optimization
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