Highly Air-Stable and Sensitive Self-Powered Broadband Photodetector Based on a PVA–MoS<sub>2</sub> Fibers/n-Si Heterojunction

We designed and demonstrated a self-powered poly(vinyl alcohol) (PVA)–MoS2 fibers/n-Si heterojunction (HJ) device for a high-performance photodetector. Light-intensity-dependent I–V measurements were carried out, ranging from the dark to 150 mW/cm2 for visible light. Furthermore, electro-optical measurements of HJ under UV (365 and 395 nm), IR (850 nm), and yellow light (590 nm) for constant light power were investigated in detail with the help of I–V characteristics. The PVA–MoS2/n-Si device showed a pronounced photoresponse at all of these wavelengths. The optimum values of the wavelength-dependent photodetector parameters were obtained under yellow light. In the evaluation of the optical measurements under yellow light, the maximum on/off ratio, R, D, NPDR, and EQE values were 2.91 × 105 (zero bias), ∼480 mA/W (V = −2.0 V), 5.71 × 1012 Jones (zero bias), 4.64 × 109 W1– (zero bias), and 100.8 (V = −2.0 V), respectively. Furthermore, after 25 and 125 days without any encapsulation, the air stability of the device was observed to be excellent in the dark and the light.

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Publication Details

Journal
ACS Applied Electronic Materials
Published
2025-01-09
DOI
https://doi.org/10.1021/acsaelm.4c01854
Citations
14
Primary Topic
Nanowire Synthesis and Applications
Type
article
Field-Weighted Citation Impact
9.44

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article

Highly Air-Stable and Sensitive Self-Powered Broadband Photodetector Based on a PVA–MoS2 Fibers/n-Si Heterojunction

Fatma Yıldırım, Şaki̇r Aydoğan, Mehmet Biber, Hamed Fayaz Rouhi et al.
14 citations
ACS Applied Electronic Materials
Nanowire Synthesis and Applications
9.44
article

Highly Air-Stable and Sensitive Self-Powered Broadband Photodetector Based on a PVA–MoS2 Fibers/n-Si Heterojunction

Fatma Yıldırım, Şaki̇r Aydoğan, Mehmet Biber, Hamed Fayaz Rouhi, Hossein Mahmoudi Chenari
article en
14 citations

Abstract

We designed and demonstrated a self-powered poly(vinyl alcohol) (PVA)–MoS2 fibers/n-Si heterojunction (HJ) device for a high-performance photodetector. Light-intensity-dependent I–V measurements were carried out, ranging from the dark to 150 mW/cm2 for visible light. Furthermore, electro-optical measurements of HJ under UV (365 and 395 nm), IR (850 nm), and yellow light (590 nm) for constant light power were investigated in detail with the help of I–V characteristics. The PVA–MoS2/n-Si device showed a pronounced photoresponse at all of these wavelengths. The optimum values of the wavelength-dependent photodetector parameters were obtained under yellow light. In the evaluation of the optical measurements under yellow light, the maximum on/off ratio, R, D, NPDR, and EQE values were 2.91 × 105 (zero bias), ∼480 mA/W (V = −2.0 V), 5.71 × 1012 Jones (zero bias), 4.64 × 109 W1– (zero bias), and 100.8 (V = −2.0 V), respectively. Furthermore, after 25 and 125 days without any encapsulation, the air stability of the device was observed to be excellent in the dark and the light.

ACS Applied Electronic MaterialsVol. 7(2)
Ardahan University (TR), Necmettin Erbakan University (TR), Atatürk University (TR), University of Guilan (IR)
Atatürk Üniversitesi
Affordable and clean energy
Openalex Percentile: Top 2%
Nanowire Synthesis and Applications
9.44
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