Tin‐Based 2D/3D Perovskite Vertical Heterojunction for High‐Performance Synaptic Phototransistors

Abstract There is considerable interest in photodetectors based on nontoxic lead‐free perovskites. Tin‐based perovskites have been regarded as one type of the most promising candidate materials for these devices due to their relatively low bandgap and high light absorption coefficient. In this work, a stacked 2D/3D heterostructure in perovskite films is achieved through a convenient vacuum drying process, which results in an ultrahigh responsivity of up to 6.8 × 10 5 A W −1 and a high detectivity up to 4.0 × 10 14 Jones at a low gate voltage of −5 V across a broad wavelength region from ultraviolet to near‐infrared. Remarkably, the device exhibits synaptic behavior, as demonstrated by its photocurrent response to both photonic and electric stimuli, which closely resembles the memory behavior observed in biological neural networks, promising applications in opto‐synaptic devices.

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Publication Details

Journal
Advanced Functional Materials
Published
2025-01-09
DOI
https://doi.org/10.1002/adfm.202422267
Citations
14
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
10.23

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article

Tin‐Based 2D/3D Perovskite Vertical Heterojunction for High‐Performance Synaptic Phototransistors

Feng Yan, Hok‐Leung Loi, Tianyou Zhai, Zeyu Zhao et al.
14 citations
Advanced Functional Materials
Perovskite Materials and Applications
10.23
article

Tin‐Based 2D/3D Perovskite Vertical Heterojunction for High‐Performance Synaptic Phototransistors

Feng Yan, Hok‐Leung Loi, Tianyou Zhai, Zeyu Zhao, Jiupeng Cao, Tianyue Wang, Liang Li, Dapeng Liu, Jing Zhuang, Mitch Guijun Li, Yang Xu
article en
14 citations

Abstract

Abstract There is considerable interest in photodetectors based on nontoxic lead‐free perovskites. Tin‐based perovskites have been regarded as one type of the most promising candidate materials for these devices due to their relatively low bandgap and high light absorption coefficient. In this work, a stacked 2D/3D heterostructure in perovskite films is achieved through a convenient vacuum drying process, which results in an ultrahigh responsivity of up to 6.8 × 10 5 A W −1 and a high detectivity up to 4.0 × 10 14 Jones at a low gate voltage of −5 V across a broad wavelength region from ultraviolet to near‐infrared. Remarkably, the device exhibits synaptic behavior, as demonstrated by its photocurrent response to both photonic and electric stimuli, which closely resembles the memory behavior observed in biological neural networks, promising applications in opto‐synaptic devices.

Advanced Functional MaterialsVol. 35(24)
Hong Kong Polytechnic University (HK), Chinese Academy of Sciences (CN), Hong Kong University of Science and Technology (HK), Hefei Institutes of Physical Science (CN), Institute of Solid State Physics (CN), Huazhong University of Science and Technology (CN), University of Hong Kong (HK)
Innovation and Technology Fund, National Key Research and Development Program of China
Openalex Percentile: Top 2%
Perovskite Materials and Applications
10.23
DOIOpen Access PDFOpenAlex
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