Origin of Enhanced Photoelectrochemical Activity of the n‐CdS/p‐type Semiconductor Interface: Homojunction or Heterojunction? (Small 1/2025)
Photoelectrochemical Cells The efficiency of a p-type photocathode in a photoelectrochemical (PEC) cell can be enhanced by introducing a buried p–n junction due to unintentional Cd doping during CdS formation rather than the CdS/p-semiconductor heterojunction itself. For the first time, a homojunction in CuInS2 was demonstrated using Cd doping for PEC H2 production. More in article number 2405048, Jin Young Kim, Eun Duck Park, and co-workers.
Authors
- Eun Duck Park (ORCID: https://orcid.org/0000-0001-5959-1982)
- Oh‐Shim Joo (ORCID: https://orcid.org/0000-0001-7145-5246)
- Minki Jun (ORCID: https://orcid.org/0000-0002-4592-4819)
- Noyoung Yoon (ORCID: https://orcid.org/0000-0002-5999-4631)
- Sang Youn Chae (ORCID: https://orcid.org/0000-0002-6936-2224)
- Jin Young Kim (ORCID: https://orcid.org/0000-0003-4822-3804)
Institutions
- Yonsei University (KR)
- Ajou University (KR)
- Korea Institute of Science and Technology (KR)
Publication Details
- Journal
- Small
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1002/smll.202570002
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00