High-energy density dielectric film capacitors enabled by grain boundary engineering
We demonstrate that the energy storage performance of 0.85BaTiO 3 -0.15Bi(Mg 0.5 Zr 0.5 )O 3 films has been significantly enhanced by designing film microstructure, providing a practical avenue for developing high-performance dielectric film capacitors.
Authors
- Rui Lu (ORCID: https://orcid.org/0000-0002-2465-7459)
- Chun‐Lin Jia (ORCID: https://orcid.org/0000-0001-7536-9521)
- Chunrui Ma (ORCID: https://orcid.org/0000-0002-7824-7930)
- Tingzhi Duan
- Yanzhu Dai
- Yiqin Lu (ORCID: https://orcid.org/0000-0002-5631-6413)
- Ming Liu (ORCID: https://orcid.org/0000-0002-8268-0593)
- Lu Lu (ORCID: https://orcid.org/0000-0001-7812-7659)
- Shao‐Bo Mi (ORCID: https://orcid.org/0000-0002-8767-1573)
- Weijie Fu
- Yupeng Liu (ORCID: https://orcid.org/0000-0001-8347-7338)
- Tian‐Yi Hu
- Qiuyang Han (ORCID: https://orcid.org/0009-0005-3045-0533)
Institutions
- Foshan University (CN)
- Ji Hua Laboratory (CN)
- Xi'an Jiaotong University (CN)
Publication Details
- Journal
- Journal of Materials Chemistry A
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d4ta07104b
- Citations
- 8
- Primary Topic
- Ferroelectric and Piezoelectric Materials
- Type
- article
- Field-Weighted Citation Impact
- 4.14
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China
- Fundamental Research Funds for the Central Universities
- Basic and Applied Basic Research Foundation of Guangdong Province