Facile controlled growth of multilayer h-BN thin films using spaced-confined APCVD and its gate dielectric application
Centimeter-scale multilayer h-BN thin films with tunable thickness are synthesized by space-confined APCVD, which can be used as a gate dielectric in electronic devices.
Authors
- Yajuan Zhao (ORCID: https://orcid.org/0000-0002-2450-6490)
- Jialu Huang (ORCID: https://orcid.org/0000-0003-2267-8632)
- Wenyan Li (ORCID: https://orcid.org/0000-0001-9575-7812)
- Liang Shi (ORCID: https://orcid.org/0000-0002-8010-3821)
- Yalong Li (ORCID: https://orcid.org/0000-0001-8499-3510)
- Haolin Wang (ORCID: https://orcid.org/0009-0003-8852-174X)
- Qian Ma
- Fu Zhen
Institutions
- Xidian University (CN)
- Beijing Microelectronics Technology Institute (CN)
- Collaborative Innovation Center of Advanced Microstructures (CN)
- Shaanxi University of Science and Technology (CN)
Publication Details
- Journal
- CrystEngComm
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d4ce01138d
- Citations
- 2
- Primary Topic
- Graphene research and applications
- Type
- article
- Field-Weighted Citation Impact
- 1.04