The effect of introducing fluorine doping and sulfur vacancies on SnS<sub>2</sub> as the anode electrode of LIBs: a density functional theory study
As the anode material of LIBs, the SnS<sub>2</sub> electrode boasts a reversible specific capacity as high as 1231 mA h g<sup>-1</sup>. Additionally, SnS<sub>2</sub> possesses a CdI2-type layered structure with a layer spacing of 0.59 nm, which allows it to accommodate numerous lithium ions and facilitate rapid charge transfer. However, as a semiconductor material, SnS<sub>2</sub>'s low electronic conductivity significantly hampers its lithium storage performance. In this paper, we propose enhancing the intrinsic electronic conductance of SnS<sub>2</sub> through fluorine doping and the introduction of sulfur vacancies, thereby constructing the F-SnS<sub>2-<i>x</i></sub> structure. The stability and superiority of this structure are confirmed by a series of theoretical calculations. The stability and rationality of the structure were characterized using the phonon spectrum. Calculation of the density of states and lithium ion diffusion barriers demonstrates that F-SnS<sub>2-<i>x</i></sub> exhibits exceptional electron/lithium ion transport kinetics. Furthermore, the results of lithium ion binding energy and differential charge show that there is a strong interaction between the F-SnS<sub>2-<i>x</i></sub> structure and lithium ions, which is advantageous for achieving long-term cycle stability. Importantly, one F-SnS<sub>2-<i>x</i></sub> molecule can adsorb up to 4.5 Li atoms, yielding a corresponding theoretical specific capacity of 702 mA h g<sup>-1</sup>, which surpasses that of SnS<sub>2</sub> with 4 atoms (586 mA h g<sup>-1</sup>). The theoretical calculation results of this work can provide valuable insights for improving the electronic conductivity and lithium storage performance of other metal sulfides.
Authors
- Shenghui Zheng (ORCID: https://orcid.org/0000-0002-1984-118X)
- Yuda Lin (ORCID: https://orcid.org/0000-0003-3287-5007)
- Zhiling Xu
- K.M. Lin (ORCID: https://orcid.org/0000-0001-8627-9863)
- Yanbing Liao
- Jiayi Guan
Institutions
- Putian University (CN)
Publication Details
- Journal
- Physical Chemistry Chemical Physics
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d4cp04032e
- Citations
- 3
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 2.19
Funders
- Natural Science Foundation of Fujian Province
- Department of Education, Fujian Province
- Putian University