Device optimized simulation for Silicon-Based MEMS Piezoresistive Pressure Sensors

In this research, we have developed a comprehensive simulation project that integrates force-electric coupling to examine the impact of multiple variables on MEMS pressure sensor performance. The project’s distinctive feature is its ability to automatically process various input parameters within a specified tolerance range, swiftly displaying post-processing results that aid in structural optimization. Based on the outcomes of our simulations, we developed a piezoresistive sensor featuring a membrane that measures $200 \mu \mathrm{~m} \times 200 \mu \mathrm{~m} \times 3 \mu \mathrm{~m}$ and piezoresistors sized $24 \mu \mathrm{~m} \times 5 \mu \mathrm{~m}$. The designed sensor demonstrates a sensitivity of $0.494 \mathrm{~mV} / \mathrm{kPa}$ and a non-linearity of 0.0039% FS. The simulated sensitivity result is coordinated with the experimental device outputs and the non-linearity result is much better than the device. After post optimization, the device’s sensitivity is enhanced by 13.3%. This simulation study stands as a testament to the potential of simulation in advancing MEMS technology, paving the way for more sophisticated and efficient sensor designs.