13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD
In this work, we report the growth and fabrication optimization of a long wavelength InAs/GaSb type-II superlattice (T2SL) nBn detector grown by metal–organic chemical vapor deposition. A GaAs like interfacial scheme was employed to grow the T2SLs matched to InAs substrates. A larger bandgap InAs/GaSb T2SL was used as an electron barrier, removing the need for AlSb based materials within this detector. At 77 K and −0.1 V, the photodetector showed a dark current density of 2.2 × 10−2 A cm−2 and a 100% cutoff wavelength of 13 µm. The external quantum efficiency was found to be 54.4% at 9 µm. The peak detectivity was found to be 4.43 × 1010 cm Hz1/2/W at 9 µm, which is very comparable with similar deep etched detectors grown by molecular beam epitaxy.
Authors
- J. I. Davies (ORCID: https://orcid.org/0000-0003-1068-6344)
- Richard Brown (ORCID: https://orcid.org/0000-0001-9106-2888)
- Richard Beanland (ORCID: https://orcid.org/0000-0003-1749-4134)
- Adam P. Craig (ORCID: https://orcid.org/0000-0003-4641-3153)
- Andrew Marshall (ORCID: https://orcid.org/0000-0001-5653-7059)
- Ka Ming Wong (ORCID: https://orcid.org/0000-0003-3770-1380)
- George Seager
- Qiang Li (ORCID: https://orcid.org/0000-0001-6875-7403)
- F.L. Castillo Alvarado
- Chen Liu (ORCID: https://orcid.org/0009-0000-7349-8610)
Institutions
- IQE (United Kingdom) (GB)
- University of Warwick (GB)
- Lancaster University (GB)
- Cardiff University (GB)
Publication Details
- Journal
- APL Photonics
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1063/5.0231448
- Citations
- 5
- Primary Topic
- Advanced Semiconductor Detectors and Materials
- Type
- article
- Field-Weighted Citation Impact
- 3.65
Funders
- Royal Society
- Cardiff University
- National Natural Science Foundation of China
- Engineering and Physical Sciences Research Council
- European Regional Development Fund