Semiconductor-based direct current triboelectric nanogenerators and its application

Abstract Triboelectric nanogenerator (TENG) utilizing tribovoltaic effect can directly produce direct current with high energy conversion efficiency, which expands their application in semiconductor devices and self-powered systems. This work comprehensively summarizes the recent developments in semiconductor-based direct current TENGs (SDC-TENGs), which hold significant promise for DC energy harvesting technologies and semiconductor systems. First, the tribovoltaic effect is elucidated, and SDC-TENGs are categorized into six types based on different triboelectric structures: metal−semiconductor (M−S), metal−insulator−semiconductor (M−I−S), semiconductor−semiconductor (S−S), semiconductor−insulator−semiconductor (S−I−S), liquid−semiconductor (L−S), and metal/semiconductor−liquid−semiconductor (M/S−L−S) contact devices. Subsequent sections detail the operational mechanisms, strengths, and limitations of each category. Additionally, this paper outlines the enhancement mechanisms of SDC-TENGs providing guidance and recommendations for performance improvement. The conclusion highlights potential application scenarios for various types of SDC-TENGs, outlining the prospective benefits and challenges. SDC-TENG technology is poised to drive revolutionary developments in semiconductor devices and self-powered systems.