Design and analysis of a vertically extended gate field effect transistor (VEG-FET)-based hydrogen gas sensor: a comprehensive modeling and simulation approach
In this work, Pt–H 2 interaction and Pt work function dependency on H 2 pressure and desorption area were modeled. Based on the analysis, a novel vertically extended gate FET (VEG-FET) based amplifier was developed for varying H 2 pressures.
Authors
- Pramod Martha (ORCID: https://orcid.org/0000-0002-0889-0525)
- Mayank Kohli (ORCID: https://orcid.org/0009-0007-5234-5210)
- Rahul Kumar (ORCID: https://orcid.org/0000-0001-6754-1918)
- Santosh Kumar Behera (ORCID: https://orcid.org/0000-0002-8542-1298)
Institutions
- Indian Institute of Technology Kharagpur (IN)
- Manipal Academy of Higher Education (IN)
- Department of Health & Family Welfare (IN)
- GLA University (IN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d4tc04574b
- Citations
- 3
- Primary Topic
- Gas Sensing Nanomaterials and Sensors
- Type
- article
- Field-Weighted Citation Impact
- 2.19