Enhancing AC stress stability in amorphous indium gallium zinc oxide thin-film transistors <i>via</i> controlled hydrogen diffusion
To optimize the hydrogen content in a -IGZO TFTs, hafnium oxide (HfO 2 ) passivation via atomic layer deposition (ALD) and subsequent annealing were used. As a result, AC stress stability was improved, reducing the I on degradation rate from 69% to 9%.
Authors
- Hyun Jae Kim (ORCID: https://orcid.org/0000-0002-6879-9256)
- Dongil Ho
- Seonggeun Kim
- Choongik Kim (ORCID: https://orcid.org/0000-0001-7494-0677)
- Jae-Sung Kim
Institutions
- Sogang University (KR)
- Kongju National University (KR)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d4tc04399e
- Citations
- 8
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 5.84
Funders
- Kongju National University
- Ministry of Science and ICT, South Korea