Tunnel magnetic contacts with perpendicular anisotropy of magnetic electrodes as promising elements for recording information

In this work, we present the results of our research of resistance and capacitance changes of tunnel magnetic contacts, in which the magnetic electrodes have perpendicular anisotropy. The paper proposes a mechanism that explains the appearance of tunnel magnetic capacitance in these contacts and presents the results of measurements of the value of tunnel magnetic resistance and tunnel magnetic capacity in tunnel contacts Tb22–δCo5Fe73/Pr6O11/Tb19–δCo5Fe76, where the value of tunnel magnetic resistance is almost 100%, and the value of the tunnel magnetic capacity is more than 80%. It is shown that tunnel magnetic contacts with perpendicular magnetization of electrodes can have a good prospect of practical use in the development of spintronics elements. The work also provides a structural diagram of the construction of an information carrier based on tunnel magnetic contacts and describes the principle of recording information in such a structure.