Impacts of using Different Semiconductor Technologies on Drivetrain Optimization
In electric passenger vehicles with modest performance the drivetrain usually consists of one inverter, one electrical machine and a single-speed transmission. The inverter is typically a two-level inverter using either Si IGBT transistors with an anti-parallel Si diode, or a SiC MOSFET transistor with or without an anti-parallel diode. The benefits of selecting SiC MOSFET as semiconductor technology are clear: increased efficiency and better thermal properties. The benefit of Si IGBT is lower cost for the manufacturer. However, a fair comparison must consider drivetrains that have been optimised with the different semiconductors in mind since it is the system level cost and efficiency that is most interesting from a vehicle-level perspective. In this paper, the production and running cost of drivetrains using Si IGBT and SiC MOSFET are compared. Furthermore, the paper includes a cost model for traction inverters that has been developed in collaboration with a large industrial partner in the automotive industry.
Authors
- Gabriel Domingues (ORCID: https://orcid.org/0009-0003-3887-0247)
- Hannes Bydén
- Meng Lu
Institutions
- Lund University (SE)
Publication Details
- Published
- 2024-11-26
- DOI
- https://doi.org/10.1109/esars-itec60450.2024.10819930
- Primary Topic
- Electric and Hybrid Vehicle Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00