High-energy-resolution passivated implanted planar silicon detectors
Abstract An alpha particle detector with high energy resolution is highly desired in the fundamental field of high-energy physics and various applications of environmental monitoring. In this paper, an excellent energy resolution of 0.35% for 5486 keV α -particles from 241 Am with a charge collection efficiency of 98.5% is achieved by a passivated implanted planar silicon detector with a window area of 530 mm 2 . The high energy resolution is attributed to high crystalline quality with a long carrier lifetime, indicating less scattering of charges by defects and suppression of randomness of signal amplitude distribution. The enhanced energy resolution of radiation detectors will substantially reinforce the exploration within the realm of basic physics and augment the capabilities pertaining to biomedical drug development.
Authors
- Anqi Hu (ORCID: https://orcid.org/0000-0002-5145-9474)
- Jianfei Xia (ORCID: https://orcid.org/0000-0001-8555-9230)
- Ming Zhang (ORCID: https://orcid.org/0000-0002-9372-4926)
- Qiaoli Liu (ORCID: https://orcid.org/0000-0003-4033-1528)
- S. Li (ORCID: https://orcid.org/0009-0006-9924-2713)
Institutions
- Beijing University of Posts and Telecommunications (CN)
Publication Details
- Journal
- Japanese Journal of Applied Physics
- Published
- 2025-01-01
- DOI
- https://doi.org/10.35848/1347-4065/ada70a
- Citations
- 1
- Primary Topic
- CCD and CMOS Imaging Sensors
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- National Natural Science Foundation of China
- Data Center of Management Science, National Natural Science Foundation of China - Peking University