Displacement damage effects in MoS₂-based electronics

Abstract Owing to the unique characteristics of ultra-thin body and nanoscale sensitivity volume, MoS 2 -based field-effect transistors (FETs) are regarded as optimal components for radiation-hardened integrated circuits (ICs), which is exponentially growing demanded especially in the fields of space exploration and the nuclear industry. Many researches on MoS 2 -based radiation tolerance electronics focused on the total ionizing dose (TID) effect, while few works concerned the displacement damage (DD) effects, which is more challenging to measure and more crucial for practical applications. We first conducted measurements to assess the DD effects of MoS 2 FETs, and then presented the stopping and ranges of ions in matter (SRIM) simulation to analysis the DD degradation mechanism in MoS 2 electronics. The monolayer MoS 2 -based FETs exhibit DD radiation tolerance up to 1.56 × 10 13 MeV/g, which is at least two order of magnitude than that in conventional radiation hardened ICs. The exceptional DD radiation tolerance will significantly enhance the deployment of MoS 2 integrated circuits in environments characterized by high-energy solar and cosmic radiation exposure.