The impact of plasmonic Ag−Au bimetallic nanoparticles on photocurrent enhancement in GaN-based photodetectors

Abstract Recently, there has been considerable interest in high-efficiency ultraviolet (UV) photodetectors for their potential practical uses. In this study, a high-quality UV photodetector was fabricated using a combination of Ag and Au NPs with GaN film. The GaN film was deposited using sputtering technique, whereas Ag and Au films were grown using thermal evaporation technique. Ag−Au bimetallic nanoparticles were formed by treating them at the various annealing temperature to improve the interaction between light and the photoactive layers of the photodetectors. The optimal annealing temperature to achieve the best performance of a photodetector is 650 °C. This led to a photoresponsivity of 98.5 A/W and the ON/OFF ratio of 705 at low bias voltage of 1 V. This work establishes the foundation for the advancement of high-performance UV photodetectors.

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Publication Details

Journal
Journal of Semiconductors
Published
2024-12-01
DOI
https://doi.org/10.1088/1674-4926/24090014
Citations
4
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.24
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article

The impact of plasmonic Ag−Au bimetallic nanoparticles on photocurrent enhancement in GaN-based photodetectors

Eun Kyu Kim, Thi Kim Oanh Vu, Thi Thu Phuong Bui, Thi Thanh Bao Nguyen et al.
4 citations
Journal of Semiconductors
GaN-based semiconductor devices and materials
1.24
article

The impact of plasmonic Ag−Au bimetallic nanoparticles on photocurrent enhancement in GaN-based photodetectors

Eun Kyu Kim, Thi Kim Oanh Vu, Thi Thu Phuong Bui, Thi Thanh Bao Nguyen, Ngoc Anh Nguyen, Thi Minh Hien Nguyen
article en
4 citations

Abstract

Abstract Recently, there has been considerable interest in high-efficiency ultraviolet (UV) photodetectors for their potential practical uses. In this study, a high-quality UV photodetector was fabricated using a combination of Ag and Au NPs with GaN film. The GaN film was deposited using sputtering technique, whereas Ag and Au films were grown using thermal evaporation technique. Ag−Au bimetallic nanoparticles were formed by treating them at the various annealing temperature to improve the interaction between light and the photoactive layers of the photodetectors. The optimal annealing temperature to achieve the best performance of a photodetector is 650 °C. This led to a photoresponsivity of 98.5 A/W and the ON/OFF ratio of 705 at low bias voltage of 1 V. This work establishes the foundation for the advancement of high-performance UV photodetectors.

Journal of SemiconductorsVol. 45(12)
Duy Tan University (VN), Hanyang University (KR), Vietnam Academy of Science and Technology (VN)
Affordable and clean energy
Openalex Percentile: Top 20%
GaN-based semiconductor devices and materials
1.24
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The impact of plasmonic Ag−Au bimetallic nanoparticles on photocurrent enhancement in GaN-based photodetectors — Eun Kyu Kim, Thi Kim Oanh Vu, et al. · Journal of Semiconductors (2024) | TGRS Research Map | TGRS