A Novel Gan Hemt Cascode Microwave Power Amplifier for Wireless Communications
A novel cascode-type GaN HEMT circuit is proposed in the present study.The independent bias method is used to improve linearity as well as efficiency.At one tone operation, the proposed power amplifier of 2.1-GHz has a power gain of 16.5 dB, and 32 dBm output power with an efficiency of 66%.In addition, the proposed amplifier achieves an efficiency of 35.8% and 19.7-dB power gain with a IMD3 level of -35 dBc, for a 4-MHz spacing two-tone operation.The proposed amplifier is compared with a conventional amplifier.It shows that the proposed amplifier offers superior performance over the conventional one in terms of efficiency as well as linearity.
Authors
- Xuan Loi Dai (ORCID: https://orcid.org/0009-0008-2075-3890)
- Nhi Doan
- Hoang Anh Dang (ORCID: https://orcid.org/0009-0008-1836-866X)
- Do Van Dung (ORCID: https://orcid.org/0000-0001-6872-3481)
- Lương Duy Mạnh (ORCID: https://orcid.org/0000-0003-3292-3750)
- Long Tran Huy
- Phuong Nhung
- Nghia Hoang Trong
Publication Details
- Journal
- Journal of Engineering Science and Technology Review
- Published
- 2024-12-01
- DOI
- https://doi.org/10.25103/jestr.176.14
- Primary Topic
- Advanced Power Amplifier Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00