Analysis of AgInGaSe<sub>2</sub> Thin Films Based on Room-temperature Photoluminescence Characterization
AgInGaSe2 (AIGS) solar cell with wide bandgap is very promising for fabricating CuInGaSe2 solar cell based tandem solar cells. Defects in AIGS solar cell play a very important role in the device performance. In this work, properties of AIGS film are studied. And the temperature dependence of the photoluminescence (PL) was studied to reveal its influence on solar cell properties. The PL transitions associated with various recombination processes in AIGS solar cell are studied at room temperature (300K). In the PL spectra, strong PL emission lines generated by donor-acceptor pair (DAP) are clearly observed. The spectra of the room-temperature PL spectrum are dominated by DAP. The room temperature PL is also used to calculate bandgap of AIGS films and the result is compared with that measured by the quantum efficiency. As a conclusion, the room-temperature PL of AIGS is dominated by DAP emissions. Also, room temperature PL is an effect method to calculate film bandgap. The AIGS film with high crystallinity shows a conversion efficiency of 9.6%, which is over average.
Authors
- Lu Yong (ORCID: https://orcid.org/0000-0002-8947-6106)
- X. T. Zhou
- Xianfeng Zhang (ORCID: https://orcid.org/0000-0003-1040-9283)
Institutions
- Foshan University (CN)
- Guangzhou Vocational College of Science and Technology (CN)
Publication Details
- Published
- 2024-11-26
- DOI
- https://doi.org/10.1109/icamechs63130.2024.10818810
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Science Foundation