Bandgap-Tunable Aluminum Gallium Oxide Deep-UV Photodetector Prepared by RF Sputter and Thermal Interdiffusion Alloying Method

Gallium oxide (Ga2O3) has gained considerable attention due to its wide bandgap, the availability of native substrates, and its excellent properties for solar-blind photodetectors, transparent electronics, and next-generation power devices. However, the expensive Ga2O3 native substrates have restricted its widespread adoption. To reduce costs and further the development of β-Ga2O3-based devices, there is a need for bandgap-tunable oxide films with high crystal quality for deep-ultraviolet (DUV) photodetectors and high-breakdown-field power devices. This study introduces a Thermal Interdiffusion Alloying method to address these requirements. It focuses on developing deep ultraviolet (DUV) photodetectors using β-Ga2O3 thin films on sapphire substrates by promoting the diffusion of aluminum (Al) atoms from the substrate into the film, resulting in the formation of aluminum gallium oxide (β-(AlxGa1−x)2O3). The aluminum content is controlled by adjusting the process temperature, allowing for tunable detection wavelengths and enhanced DUV sensing capabilities. Radio frequency (RF) sputtering optimizes the film’s quality by adjusting the sputtering power and the argon/oxygen (Ar/O2) flow ratio. Material analysis indicates that this method expands the optical bandgap and shifts the response wavelength to 210 nm, significantly boosting the performance of the fabricated photodetectors. This research presents considerable potential for advancing DUV photodetectors across various disinfection applications.