GaN/SiC Upper F-Band Single Ended Power Amplifier
This article presents the design implementation, analysis and performance of a four-stage single ended power amplifier (PA) developed on a 40 nm gallium nitride on silicon carbide (GaN/SiC) technology. The circuit targets the upper F-Band, and it operates from 125 GHz to 130 GHz. At 130 GHz, the amplifier aims to have a small signal power gain <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$G$</tex><inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</inf> of 18 dB, peak power-added efficiency (PAE) of 10, and to achieve a saturated output power (PSat) of 27 dBm. Based on EM simulations this is the highest power level reported on this technology at the frequency of operation to date.
Authors
- Kevin Kornegay (ORCID: https://orcid.org/0000-0002-5233-0154)
- German Cortes
- Ali Darwish (ORCID: https://orcid.org/0000-0001-6245-4604)
- Michel Kornegay
- Willie L. Thompson
Institutions
- Johns Hopkins University (US)
- United States Army Combat Capabilities Development Command (US)
- Johns Hopkins University Applied Physics Laboratory (US)
- Morgan State University (US)
Publication Details
- Published
- 2024-10-21
- DOI
- https://doi.org/10.1109/imas61316.2024.10818212
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00