Finger Width Effects on Performance of GaN HEMTs

In this study, we characterize GaN-HEMT devices and present both DC and AC measurement outcomes for the multi-finger configurations. Specifically, we introduce a new device featuring wide electrodes to assess and compare the performance of various multi-finger arrangements. This particular transistor comprises two fingers, each measuring 150 μm in width. We analyze and compare the s-parameters of structures with varying widths, extending our frequency range up to 67 GHz. This newly developed wide-finger configuration is integral to our ongoing efforts in developing optimized modeling approaches and improved transistor designs. The comparative analysis of different finger widths lays the groundwork for future explorations into high-frequency phenomena, including wave propagation effects and their impact on the performance of millimeter-wave transistors.