Bond Confinement‐Dependent Peierls Distortion in Epitaxially Grown Bismuth Films

A systematic study of the impact of film thickness on the properties of thin Bi films is presented. To this end, epitaxial films of high quality have been grown on a Si (111) substrate with thicknesses ranging from 1.9 to 29.9 nm. Broadband optical spectroscopy reveals a notable decline in the optical dielectric constant and the absorption peak height as the film thickness decreases, alongside a shift of the absorption maximum to higher photon energies. Raman and pump-probe spectroscopy show that the phonon mode frequencies increase upon decreasing film thickness, with the in-plane mode frequency rising by 10% from the thickest to the thinnest sample. The X-ray diffraction analysis reveals an increasing Peierls distortion for thinner films, explaining the observed property changes. Quantum chemical bonding analysis and density functional theory calculations show that the properties of thin bismuth are influenced by the interplay between electron localization and delocalization, characteristic of metavalently bonded solids. This study shows that for solids that utilize metavalent bonding, a thickness reduction leads to significant property changes. The effect can even be employed to tailor material properties without the need to change material stoichiometry.

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Publication Details

Journal
Advanced Materials
Published
2024-12-30
DOI
https://doi.org/10.1002/adma.202416938
Citations
7
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
0.82

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article

Bond Confinement‐Dependent Peierls Distortion in Epitaxially Grown Bismuth Films

Carl‐Friedrich Schön, Joachim Mayer, Abdur Rehman Jalil, Yazhi Xu et al.
7 citations
Advanced Materials
Advanced Thermoelectric Materials and Devices
0.82
article

Bond Confinement‐Dependent Peierls Distortion in Epitaxially Grown Bismuth Films

Carl‐Friedrich Schön, Joachim Mayer, Abdur Rehman Jalil, Yazhi Xu, Peter Kerres, Felix Hoff, Matthias Wuttig, Julian Mertens, Riccardo Mazzarello, Jan Köttgen, Simone Ritarossi, Dasol Kim, Thomas Schmidt, Jonathan Frank, Timo Veslin, Lucas Bothe
article en
7 citations

Abstract

A systematic study of the impact of film thickness on the properties of thin Bi films is presented. To this end, epitaxial films of high quality have been grown on a Si (111) substrate with thicknesses ranging from 1.9 to 29.9 nm. Broadband optical spectroscopy reveals a notable decline in the optical dielectric constant and the absorption peak height as the film thickness decreases, alongside a shift of the absorption maximum to higher photon energies. Raman and pump-probe spectroscopy show that the phonon mode frequencies increase upon decreasing film thickness, with the in-plane mode frequency rising by 10% from the thickest to the thinnest sample. The X-ray diffraction analysis reveals an increasing Peierls distortion for thinner films, explaining the observed property changes. Quantum chemical bonding analysis and density functional theory calculations show that the properties of thin bismuth are influenced by the interplay between electron localization and delocalization, characteristic of metavalently bonded solids. This study shows that for solids that utilize metavalent bonding, a thickness reduction leads to significant property changes. The effect can even be employed to tailor material properties without the need to change material stoichiometry.

Advanced MaterialsVol. 37(7)
Chang'an University (CN), Jülich Aachen Research Alliance (DE), Sapienza University of Rome (IT), RWTH Aachen University (DE)
Deutsche Forschungsgemeinschaft, Bundesministerium für Bildung und Forschung, RWTH Aachen University
Openalex Percentile: Top 25%
Advanced Thermoelectric Materials and Devices
0.82
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