Thermal Optimization of Edge-Emitting Lasers Arrays

This paper presents a novel approach to address the issue of uneven temperature distribution in one-dimensional laser arrays, specifically in gallium nitride edge-emitting lasers emitting green light of 540 nm. The results were obtained using heat flow numerical analysis, which included an optimization method specifically developed for this type of array. It was demonstrated that thermal optimization of a one-dimensional edge-emitting laser array can be achieved by adjusting the placement of the emitters within the array and the size of the top gold contact, without changing the overall dimensions of the device. The proposed design alterations ensure an even temperature distribution across the array without the need for a complex and expensive cooling systems. The proposed optimization method can be applied to arrays made from various material systems, including nitrides, arsenides, and phosphides.

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Publication Details

Journal
Materials
Published
2024-12-30
DOI
https://doi.org/10.3390/ma18010107
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.31

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article

Thermal Optimization of Edge-Emitting Lasers Arrays

Robert P. Sarzała, Maciej Dems, Dominika Dąbrówka
1 citations
Materials
GaN-based semiconductor devices and materials
0.31
article

Thermal Optimization of Edge-Emitting Lasers Arrays

Robert P. Sarzała, Maciej Dems, Dominika Dąbrówka
article en
1 citations

Abstract

This paper presents a novel approach to address the issue of uneven temperature distribution in one-dimensional laser arrays, specifically in gallium nitride edge-emitting lasers emitting green light of 540 nm. The results were obtained using heat flow numerical analysis, which included an optimization method specifically developed for this type of array. It was demonstrated that thermal optimization of a one-dimensional edge-emitting laser array can be achieved by adjusting the placement of the emitters within the array and the size of the top gold contact, without changing the overall dimensions of the device. The proposed design alterations ensure an even temperature distribution across the array without the need for a complex and expensive cooling systems. The proposed optimization method can be applied to arrays made from various material systems, including nitrides, arsenides, and phosphides.

MaterialsVol. 18(1)
Lodz University of Technology (PL)
Narodowe Centrum Nauki, Narodowym Centrum Nauki, Politechnika Lódzka
Affordable and clean energy
Openalex Percentile: Top 40%
GaN-based semiconductor devices and materials
0.31
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