High-Throughput Information Storage in an Intelligent Response Phosphor

Persistent phosphor has emerged as a promising candidate for information storage due to rapid accessibility and low-energy requirements. However, the low storage capacity has limited its practical application. Herein, we skillfully designed and developed NaGdGeO₄:Pb²⁺,Tb³⁺ stimulated phosphor by trace doped Sm³⁺. As expected, this phosphor demonstrates a larger carrier capacity than traditional commercial SrAl₂O₄:Eu²⁺,Dy³⁺ phosphors and superstrong thermostimulated luminescence (TSL) that is three times greater than its photoluminescence (PL) intensity (PL efficiency, 17.3%). A mechanism of the enhanced and controllable TSL is proposed based on electron-hole defect pair structure. We further present a high-throughput optical data recording in five dimensions in a single fluorescent film recording layer. The findings described here provide not only a universal approach for constructing TSL materials but also a new paradigm for future generation optical storage technology.