HAT-CN-Modified Spiro-OMeTAD Realizes Efficient Perovskite Solar Cells

Hole transport materials are essential for facilitating the movement of holes between the perovskite layer and the electrode. Spiro-OMeTAD (2,2′,7,7′-tetrakis (N,N-di-p-methoxyphenylamine) 9,9′-spirobifluorene) is extensively utilized as a hole transport material among various alternatives. However, spiro-OMeTAD itself has a short plate with a low hole mobility and low conductivity. We report a perovskite solar cell of n-i-p type with HAT-CN-modified spiro-OMeTAD as a hole transport layer, while HAT-CN exhibits metalloid properties. The Fermi level of the hole transport layer is shifted downward, which promotes the migration of holes from the perovskite layer to the spiro-OMeTAD hole transport layer. The HAT-CN buffer layer reduces the roughness of the spiro-OMeTAD film, thereby improving the surface contact between the hole transport layer and metal electrode. The power conversion efficiency of the device, which was modified with a HAT-CN buffer layer on the spiro-OMeTAD layer, increased from 20.45 to 21.65%. Additionally, the hysteresis index decreased from 15.99 to 11.37% and the device stability improved. This strategy effectively enhances both the charge carrier mobility and hydrophobicity of the spiro-OMeTAD layer, thereby facilitating the achievement of efficient and stable perovskite solar cells.

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Publication Details

Journal
ACS Applied Energy Materials
Published
2024-12-31
DOI
https://doi.org/10.1021/acsaem.4c02180
Citations
6
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
1.25

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article

HAT-CN-Modified Spiro-OMeTAD Realizes Efficient Perovskite Solar Cells

Yaohua Mai, Jian Yu, Yixian Li, Zhuowei Du et al.
6 citations
ACS Applied Energy Materials
Perovskite Materials and Applications
1.25
article

HAT-CN-Modified Spiro-OMeTAD Realizes Efficient Perovskite Solar Cells

Yaohua Mai, Jian Yu, Yixian Li, Zhuowei Du, Kuan Sun, Shanyue Hou, Yi Chen, Xiaoxiao Zhang, Yanlin Li, Qian Zhang, Yan Xiang, Wei You, Qiang Yang, Wenfeng Zhang, Wei Long, Zheng Xiao, Zhangfeng Huang, Zhu Ma, Junbo Yang, Hao Du, Cheng Huang, Fuchun Gou, Hong Yu
article en
6 citations

Abstract

Hole transport materials are essential for facilitating the movement of holes between the perovskite layer and the electrode. Spiro-OMeTAD (2,2′,7,7′-tetrakis (N,N-di-p-methoxyphenylamine) 9,9′-spirobifluorene) is extensively utilized as a hole transport material among various alternatives. However, spiro-OMeTAD itself has a short plate with a low hole mobility and low conductivity. We report a perovskite solar cell of n-i-p type with HAT-CN-modified spiro-OMeTAD as a hole transport layer, while HAT-CN exhibits metalloid properties. The Fermi level of the hole transport layer is shifted downward, which promotes the migration of holes from the perovskite layer to the spiro-OMeTAD hole transport layer. The HAT-CN buffer layer reduces the roughness of the spiro-OMeTAD film, thereby improving the surface contact between the hole transport layer and metal electrode. The power conversion efficiency of the device, which was modified with a HAT-CN buffer layer on the spiro-OMeTAD layer, increased from 20.45 to 21.65%. Additionally, the hysteresis index decreased from 15.99 to 11.37% and the device stability improved. This strategy effectively enhances both the charge carrier mobility and hydrophobicity of the spiro-OMeTAD layer, thereby facilitating the achievement of efficient and stable perovskite solar cells.

ACS Applied Energy MaterialsVol. 8(1)
Chongqing University (CN), Jinan University (CN), Southwest Petroleum University (CN), Beijing Solar Energy Research Institute (CN)
State Key Laboratory of Oil and Gas Reservoir Geology and Exploitation, Sichuan Province Science and Technology Support Program
Affordable and clean energy
Openalex Percentile: Top 19%
Perovskite Materials and Applications
1.25
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