Repair of H⁺ Implantation Induced Defects in SiC Single Crystal Film Fabricated by Crystal-Ion-Slicing Technique

The heterogeneous composite substrates based on SiC single-crystal film fabricated by CIS (Crystal-Ion-Slicing) technology can serve as excellent material platforms for electronic devices with specific functions. Although CIS technology is considered to retain the good material properties of the original material, the defects induced by ion implantation remain significant. Therefore, repairing implantation damage is crucial for further enhancing the material properties. In this study, the morphology, distribution, and rep arability of H+ implantation induced defects were investigated. The research demonstrates that a high concentration of H<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> exists on the film surface. On one hand, H<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> disrupts the lattice under high-temperature annealing. on the other hand, it thermally diffuses inward, forming energy level defects and causing secondary damage to the crystal. Additionally, the research confirmed that vacancy defects in the deeper layers of the film can be repaired, whereas the high-density defect clusters in the near-surface region cannot be completely repaired. Therefore, a dam-age removal process based on the surface high-density defect distribution is necessary before high temperature annealing. The research methodology in this paper is considered applicable for guiding the development of defect repair processes for various single-crystal films prepared using CIS technology, to better enhance the performance of the transferred film materials.