A High Linearity Current-Mirror MAC Circuit Design for SRAM Computing-in-Memory
Computing-in-memory (CIM), as an emerging computer architecture, can reduce the power consumption and delays of data-intensive applications caused by frequent data migration. In traditional CIM architectures, high-precision convolutional computation is often performed with large computational non-linearities due to multi-bit weighting, which reduces the computational accuracy and energy efficiency of the system. This paper proposes a high linearity current-mirror MAC circuit (CMMC) and constructs a CIM architecture that can realize 8-bit MAC using a novel 8T SRAM, which adopts the current domain computation mode and has a higher computational linearity than that of the bit-line discharge mode in the charge domain. Under the 110nm process with a 1.2V supply voltage, the functional correctness of the circuit was verified through simulation, and its linearity was calculated to be up to 99.82%, significantly enhancing the accuracy of multi-bit convolutional computation. Furthermore, the storage for a single convolutional kernel in this design is unfolded in the row direction, endowing this CIM circuit architecture with excellent parallelism and scalability.
Authors
- Hejiu Zhang
- Nan Lv
- Miaomiao Cao (ORCID: https://orcid.org/0000-0003-2160-8544)
- Yuqi Yang (ORCID: https://orcid.org/0009-0006-1826-1745)
- Ningmei Yu
- Changzhong Han
Institutions
- Xi'an University of Technology (CN)
Publication Details
- Published
- 2024-10-25
- DOI
- https://doi.org/10.1109/icicm63644.2024.10814160
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China