Polymer-Based Power OFETs with Floating Field Plate Structure Using Metal Mask Fabrication Process

The polymer semiconductor diketopyrrolopyrrole thieno[3,2-b] thiophene (DPPT-TT) has been used to prepare organic power devices due to its excellent off-state breakdown performance. However, thinner organic semiconductor (OSC) layers can lead to premature breakdown due to the two-dimensional electric field crowding effect, causing electric field accumulation at the OSC and dielectric layer interface. To obtain a higher breakdown voltage (BV) by improving the electric field distribution, we designed a floating field plate lateral drift region organic field effect transistor (FFP-LDR-OFET). In this study, we fabricated and compared two types of devices with and without the floating field plate using the same process. The results show that the addition of the floating field plate increased the device's on-state saturation current from -0.7µA to-1. IµA, a 57.1% improvement, and the off-state breakdown voltage from 619V to 1880V, a 200% enhancement.