A High-Order Temperature Compensation Bandgap Voltage Reference with Line Sensitivity Enhanced
This paper proposed a bandgap voltage reference with high-order temperature compensation structure, line sensitivity enhancement structure, and zero power start-up circuit. The circuit is designed using SMIC 0.18-µm BCD process, with a working temperature range of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$-40^{\circ}\mathrm{C}\sim 125^{\circ}\mathrm{C}$</tex>, a stable reference voltage of 735mV, and normal operation within the VDD range of 3.7V-4.7V. Adopting a simple line sensitivity enhancement structure to improve the accuracy of the current source mirror and the overall line sensitivity of the system. When VDD is 4.4V, the temperature coefficient of proposed bandgap voltage reference is simulated to be <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1.090\text{ppm}/^{\circ}\mathrm{C}$</tex>, and the line sensitivity is 1.20%/V.
Authors
- Ziyue Li
- Xiao Hu (ORCID: https://orcid.org/0000-0003-1128-4099)
- Wenqi Li (ORCID: https://orcid.org/0000-0003-4824-7275)
- Kunbo Cao
- Yong Xu
Institutions
- PLA Army Engineering University (CN)
Publication Details
- Published
- 2024-10-25
- DOI
- https://doi.org/10.1109/icicm63644.2024.10814172
- Primary Topic
- Sensor Technology and Measurement Systems
- Type
- article
- Field-Weighted Citation Impact
- 0.00