The Study of Temperature Characteristics of High-Speed High-Power Uni-Traveling-Carrier Photodetectors

In this paper, the temperature characteristics of UTC photodiode are analyzed, and a temperature control system is established to test the performance of UTC-PD at varying temperatures. The results align closely with the theoretical analysis.

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Publication Details

Published
2024-11-02
DOI
https://doi.org/10.1109/acp/ipoc63121.2024.10809570
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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The Study of Temperature Characteristics of High-Speed High-Power Uni-Traveling-Carrier Photodetectors

Jihong Ye, Xiaofeng Duan, Fuyao Liu, Kai Liu et al.
GaN-based semiconductor devices and materials
article

The Study of Temperature Characteristics of High-Speed High-Power Uni-Traveling-Carrier Photodetectors

Jihong Ye, Xiaofeng Duan, Fuyao Liu, Kai Liu, Xiaomin Ren, Shuhu Tan, Yongqing Huang, Yijie Di
article en

Abstract

In this paper, the temperature characteristics of UTC photodiode are analyzed, and a temperature control system is established to test the performance of UTC-PD at varying temperatures. The results align closely with the theoretical analysis.

Beijing University of Posts and Telecommunications (CN), State Key Laboratory of Information Photonics and Optical Communications
Affordable and clean energy
Openalex Percentile: Top 85%
GaN-based semiconductor devices and materials
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