High-Speed InAlAs Digital Alloy Avalanche Photodiode with Partially Depleted Absorber
We demonstrate a high-speed avalanche photodiode (APD) with InAlAs digital alloy multiplication layer and partially depleted absorption layer. The 3-dB bandwidth is up to 13.8 GHz and gain-bandwidth product is about 100 GHz.
Authors
- Hong Lü (ORCID: https://orcid.org/0000-0002-8340-2739)
- W. Wang (ORCID: https://orcid.org/0000-0002-8333-3374)
- Jinshan Yao (ORCID: https://orcid.org/0000-0002-4050-7864)
- Baile Chen (ORCID: https://orcid.org/0000-0002-3265-5787)
Institutions
- ShanghaiTech University (CN)
- Nanjing University (CN)
Publication Details
- Published
- 2024-11-02
- DOI
- https://doi.org/10.1109/acp/ipoc63121.2024.10809925
- Primary Topic
- Advanced Semiconductor Detectors and Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00